High Voltage Diode Reverse Recovery Time Measurement Analyzer

Product Details
Customization: Available
Reverse Recovery Current: 0~100 Ma
Forward Voltage Drop (Vf): 0~40 V
Manufacturer/Factory & Trading Company
Diamond Member Since 2024

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Basic Info.

Model NO.
DI-1nS-HV
Recovery Time Range (Trr)
0~999.9Tns
Pulse Signal Rise/Fall Speed (TF)
<1Tns
Measurement Accuracy
0.1Tns
Specification
Forward Current: 0~50 mA
Origin
China

Product Description

1. Overview

The DI-1nS-HV is a fourth-generation product designed for testing high-voltage diodes with high forward voltage drops and reverse recovery times of less than 999.9nS, with a precision of 0.1nS. Compared to the third-generation model, the fourth-generation DI-1nS-HV incorporates FPGA chips and threshold comparators with temperature control, significantly improving testing accuracy and stability.

2. Application Range

  • High-voltage diodes

3. Measurement Principle

The device includes a falling-edge trigger generator module, an adjustable power supply, high-speed comparators, and an FPGA testing module.
By adjusting the VR potentiometer, users can regulate the amplitude of the falling-edge pulse, thereby altering the reverse recovery current of the diode.
The voltage amplitude of Vadj can be adjusted to modify the forward current (IF) size.
The device uses a 50Ω resistor load, formed by 40Ω and 10Ω resistors, for determining both the falling and rising edge times. The 10Ω resistor offers a higher time constant advantage compared to the 50Ω resistor, resulting in 5 times higher precision.
The high-speed comparator and FPGA testing module are combined with an adjustable threshold, allowing independent falling and rising edge triggers. The recovery time (Trr) is displayed digitally, eliminating the need for an oscilloscope and simplifying measurement interpretation.
Continuous forward current applied to high-voltage diodes will cause the recovery time to increase. The DI-1nS-HV can perform traditional continuous constant current pulse tests and pulse constant current tests, ensuring stable measurements without increasing the temperature of the diode's PN junction.

4. Specifications

Parameter Value Unit Remarks
Forward Current 0~50 mA  
Reverse Recovery Current 0~100 mA  
Forward Voltage Drop (Vf) 0~40 V  
Reverse Voltage 0~15 V  
Recovery Time Range (Trr) 0~999.9 nS  
Pulse Signal Rise/Fall Speed (tf) <1 nS  
Operating Mode Continuous & Pulse Mode Set by button
Measurement Accuracy 0.1 nS  
High Voltage Diode Reverse Recovery Time Measurement Analyzer

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