30ns 905nm 80W Nanosecond (LD) Laser Diode Pulse Light Source

• Customization: Available
• Pulse Peak Power: 80 W
• Rise Time: 20.2Tns
• Model NO.: MDL-905R80W100-30nS
• Fall Time: 29.1Tns
• Average Power Stability: <5T% (Over 4 Hours)
• Warm-up Time: <1Tsecond
• Spot Size @ 3cm: ≈ 3Tcm
• Operating Temperature: 0 ~ +30TºC
• Operating Voltage: 12.0TV
• Expected Lifetime: 10,000Thours
• Dimensions (Without Connectors): 6.5 * 24 * 6.5Tcm
• Weight: 1.25Tkg
• Specification: Wavelength: 905± 10 nm
• Origin: China

Product Description

Product Introduction
The 905nm infrared laser diode module features high peak power, narrow pulse width, short rise time, and high repetition frequency. It is ultra-compact, long-lasting, low-cost, and easy to operate. This module is used in measurement, communication, and spectrum analysis applications. It is widely applied in sensors, scientific research, and industrial fields.

Application Examples

1. Sensors and Scientific Research
2. Industrial and LiDAR applications
3. Laser ranging and photodetector response speed testing

Specifications

Type	Value	Unit
Wavelength	905±10	nm
Pulse Peak Power	80	W
Rise Time	20.2	ns
Fall Time	29.1	ns
Average Power Stability	<5	% (over 4 hours)
Warm-up Time	<1	Second
Spot Size @ 3cm	≈ 3	cm
Operating Temperature	0 ~ +30	ºC
Operating Voltage	12.0	V
Expected Lifetime	10,000	hours
Dimensions (without connectors)	6.5 * 24 * 6.5	cm
Weight	1.25	kg