Customization: | Available |
---|---|
Output Voltage: | 4.0 to 8.0 Kv |
High Voltage Pulse Rise/Fall Time: | <10ns (with a 10PF Load) |
Suppliers with verified business licenses
Audited by an independent third-party inspection agency
1. Main Features
A: Repetition rate: 0100Hz
B: Crystal voltage: 4.08.0kV, continuously adjustable
C: High voltage pulse rise/fall time: <10ns
D: TTL level trigger
E: Electro-optic Q-switching with rise/fall voltage
F: DC input: 12V
2. Application Range
A: KD*P
B: LiNbO3
C: Others
3. Application Cases
A: Electro-optic Q-switched laser for medium-frequency LD pumping
B: Lamp-pumped Q-switched solid-state laser
4. Power Supply Parameters
Applicable wavelength: 200 to 2200 nm
Output voltage: 4.0 to 8.0 kV
High voltage pulse rise/fall time: <10ns (with a 10pF load)
Trigger signal rise time: <1us, high-level max 5.0V, TTL level, opto-isolated
No delay between trigger signal and Q-switch output
Delay jitter: <3ns
Power supply input: 12V ± 0.5V DC, power consumption <2W
Operating frequency: 0~100 Hz
Gate recovery time: 5ms (with a 10pF load, 10% to 90%)
Operating temperature: 0°C to 40°C (custom military-grade -45°C to +55°C)
5. Power Supply Dimensions
Length: 92mm
Width: 66mm
Height: 34.5mm