100Hz Lithium Niobate Electro-Optic Q-Switching Module with Pulse Compression/Expansion

• Customization: Available
• Output Voltage: -1.5kv to +2.5kv
• High Voltage Pulse Rise/Fall Time: <10ns, When Load Is 10PF
• Model NO.: LN-T100; LN-J100
• Trigger Signal Rise Time: <10ns, High Level Max 5.0V, Ttl Level
• Electro-Optic Q-Switch Pulse: Low External Interference
• Delay Jitter: 10ns ~ 30ns
• Power Supply Input: 12V ± 0.5V DC, Power Consumption <2W
• Operating Frequency: 0-100Hz, Supports Single Pulse Operation
• Gate Recovery Time: 5ms, 10% to 90% When Load Is 10PF
• Operating Temperature: 0°c to 40°c
• Repetition Rate: 0-100Hz
• Crystal Voltage: -1.5kv to +2.5kv, Continuously Adjustable
• Specification: Wavelength Range: 200 nm to 2200 nm
• Origin: China

Product Description

Key Features

A. Repetition Rate: 0-100Hz
B. Crystal Voltage: -1.5kV to +2.5kV, continuously adjustable
C. High Voltage Pulse Rise/Fall Time: <10nS
D. TTL Level Triggering
E. Fast Gate Recovery Speed
F. Electro-Optic Q-Switching (Pressurization/Depressurization)
G. Suitable for Low Frequency Q-Switching Crystals

Applications

A. KD*P
B. LiNbO3
C. Others

Application Cases

A. Low Frequency LD Pumped Electro-Optic Q-Switched Lasers
B. Lamp Pumped Q-Switched Solid-State Lasers

Power Supply Parameters

• Wavelength Range: 200 nm to 2200 nm
• Output Voltage: -1.5kV to +2.5kV
• High Voltage Pulse Rise/Fall Time: <10nS, when load is 10pF
• Trigger Signal Rise Time: <10nS, High level max 5.0V, TTL level
• Electro-Optic Q-Switch Pulse: Low external interference
• Delay Between Trigger and Q-Switch Output: No delay
• Delay Jitter: 10nS ~ 30nS
• Power Supply Input: 12V ± 0.5V DC, Power consumption <2W
• Operating Frequency: 0-100Hz, supports single pulse operation
• Gate Recovery Time: 5ms, 10% to 90% when load is 10pF
• Operating Temperature: 0°C to 40°C (Custom military-grade -45°C to +55°C)

Power Supply Dimensions

• Length: 61.4mm
• Width: 44.2mm
• Height: 17mm