Prime Silicon Wafer Used as Substrates

• Customization: Available
• After-sales Service: 12 Months
• Warranty: 12 Months
• Usage: Optical
• Certification: ISO9001
• Customized: Customized
• Transmission Range: 1.2-15μm
• Origin: China

Product Description

Silicon Wafer
Silicon single crystals are commonly used as substrates for 3-5 μm mid-wave infrared optical windows and filters. The processing of micrometer-scale optical silicon wafers encompasses various stages such as material growth, cutting, polishing, coating, and dicing. The quality, delivery time, and price are strictly controlled throughout these processes.

A silicon wafer is a crucial material for fabricating integrated circuits. Through photolithography, ion implantation, and other techniques, integrated circuits and various semiconductor devices can be manufactured on silicon wafers. Characterized by high purity, high density, and large scale, silicon wafers are sheet-like objects made of silicon.   

Single-crystal silicon is a single crystal form of silicon, a relatively active non-metal element with a nearly perfect lattice structure. It plays a significant role in enhancing the performance of integrated circuits. Larger diameters allow for the fabrication of more integrated circuits on a single wafer, resulting in higher manufacturing efficiency. This is crucial for producing integrated circuits and semiconductor devices with complex circuitry.
   
Material Data

Optical Properties
Transmission Range	1.2-15μm
Refractive Index	3.41776%@10μm
Reflection Loss	46.1%@10μm
Structure	Single crystal,synthetic
Cleavage Planes	<111>

 

Physical Properties
Density[g/cm3]	2.33
Melting Point [ºC]	1414
ThermalConductivity [W/(m×K)]	163 @ 313K
Thermal Expansion [10-6/K]	2.6 @ 293K
Knoop Hardness [kg/mm2]	1100
Specific Heat Capacity [J/(kg×K)]	712.8
Dielectric Constant	13 @f= 9.37GHz
Young's Modulus (E) [GPa]	130.91
Shear Modulus(G) [GPa]	79.92
Bulk modulus(K) [GPa]	101.97
Poisson Coefficient	0.266

 

Chemical Properties
Solubility / g/L	None
Molecular Weight / g/mol	28.09